View PSMN6R1-30YLD_8846848.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

l f p a k 5 6 PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology 10 february 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description logic level gate drive n-channel enhancement mode mosfet in lfpak56 package. nextpowers3 portfolio utilising nxps unique schottkyplus technology delivers high efficiency, low spiking performance usually associated with mosfets with an integrated schottky or schottky-like diode but without problematic high leakage current. nextpowers3 is particularly suited to high efficiency applications at high switching frequencies. 2. features and benefits ? ultra low q g , q gd and q oss for high system efficiency, especially at higher switching frequencies ? superfast switching with soft-recovery; s-factor > 1 ? low spiking and ringing for low emi designs ? unique schottkyplus technology; schottky-like performance with < 1 a leakage at 25 c ? optimised for 4.5 v gate drive ? low parasitic inductance and resistance ? high reliability clip bonded and solder die attach power so8 package; no glue, no wire bonds, qualified to 175 c ? wave solderable; exposed leads for optimal visual solder inspection 3. applications ? on-board dc-to-dc solutions for server and telecommunications ? secondary-side synchronous rectification in telecommunication applications ? voltage regulator modules (vrm) ? point-of-load (pol) modules ? power delivery for v-core, asic, ddr, gpu, vga and system components ? brushed and brushless motor control 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage 25 c t j 175 c - - 30 v i d drain current t mb = 25 c; v gs = 10 v; fig. 2 - - 66 a p tot total power dissipation t mb = 25 c; fig. 1 - - 47 w
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 2 / 13 symbol parameter conditions min typ max unit t j junction temperature -55 - 175 c static characteristics v gs = 4.5 v; i d = 15 a; t j = 25 c; fig. 10 - 6.5 8.35 m r dson drain-source on-state resistance v gs = 10 v; i d = 15 a; t j = 25 c; fig. 10 - 5.05 6 m dynamic characteristics q gd gate-drain charge v gs = 4.5 v; i d = 15 a; v ds = 15 v; fig. 12 ; fig. 13 - 1.7 - nc q g(tot) total gate charge v gs = 4.5 v; i d = 15 a; v ds = 15 v; fig. 12 ; fig. 13 - 6.4 - nc source-drain diode s softness factor i s = 15 a; v gs = 0 v; di s /dt = -100 a/s; v ds = 15 v; fig. 16 - 1.3 - 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 s source 2 s source 3 s source 4 g gate mb d mounting base; connected to drain m b 1 2 3 4 lfpak56; power- so8 (sot669) s d g m b b 0 7 6 6. ordering information table 3. ordering information package type number name description version PSMN6R1-30YLD lfpak56; power-so8 plastic single-ended surface-mounted package (lfpak56; power-so8); 4 leads sot669 7. marking table 4. marking codes type number marking code PSMN6R1-30YLD 6d130l
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 3 / 13 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage 25 c t j 175 c - 30 v v dgr drain-gate voltage 25 c t j 175 c; r gs = 20 k - 30 v v gs gate-source voltage -20 20 v p tot total power dissipation t mb = 25 c; fig. 1 - 47 w v gs = 10 v; t mb = 25 c; fig. 2 - 66 a i d drain current v gs = 10 v; t mb = 100 c; fig. 2 - 46 a i dm peak drain current pulsed; t p 10 s; t mb = 25 c; fig. 3 - 263 a t stg storage temperature -55 175 c t j junction temperature -55 175 c t sld(m) peak soldering temperature - 260 c v esd electrostatic discharge voltage hbm 250 - v source-drain diode i s source current t mb = 25 c - 39 a i sm peak source current pulsed; t p 10 s; t mb = 25 c - 250 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs = 10 v; t j(init) = 25 c; i d = 15 a; v sup 30 v; r gs = 50 ; unclamped; t p = 145 s [1] - 42 mj [1] protected by 100% test
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 4 / 13 t m b ( c ) 0 2 0 0 1 5 0 5 0 1 0 0 0 3 n a 1 9 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 1. normalized total power dissipation as a function of mounting base temperature 003aal123 0 2 5 5 0 7 5 100 125 150 175 200 0 2 0 4 0 6 0 8 0 t j (c) i d i d (a) (a) fig. 2. continuous drain current as a function of mounting base temperature 003aal125 1 0 - 1 1 1 0 1 0 2 1 0 - 1 1 1 0 1 0 2 1 0 3 v d s (v) i d i d (a) (a) d c d c 100 ms 100 ms 10 ms 10 ms 1 ms 1 ms 100 us 100 us t p = 10 us t p = 10 us limit r dson = v d s / i d limit r dson = v d s / i d fig. 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base fig. 4 - 3 3.22 k/w
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 5 / 13 symbol parameter conditions min typ max unit fig. 5 - 50 - k/w r th(j-a) thermal resistance from junction to ambient fig. 6 - 125 - k/w 003aal126 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 - 2 1 0 - 1 1 1 0 t p (s) z th(j-mb) z th(j-mb) (k/w) (k/w) p t t p t t p = t single shot single shot = 0.5 = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 fig. 4. transient thermal impedance from junction to mounting base as a function of pulse duration aaa-005750 fig. 5. pcb layout for thermal resistance junction to ambient 1 square pad; fr4 board; 2oz copper aaa-005751 fig. 6. pcb layout for thermal resistance junction to ambient minimum footprint; fr4 board; 2oz copper 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics i d = 250 a; v gs = 0 v; t j = 25 c 30 - - v v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = -55 c 27 - - v v gs(th) gate-source threshold voltage i d = 1 ma; v ds = v gs ; t j = 25 c 1.2 1.68 2.2 v
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 6 / 13 symbol parameter conditions min typ max unit v gs(th) /t gate-source threshold voltage variation with temperature 25 c t j 150 c - -3.9 - mv/k v ds = 24 v; v gs = 0 v; t j = 25 c - - 1 a i dss drain leakage current v ds = 24 v; v gs = 0 v; t j = 150 c - - 100 a v gs = 16 v; v ds = 0 v; t j = 25 c - - 100 na i gss gate leakage current v gs = -16 v; v ds = 0 v; t j = 25 c - - 100 na v gs = 4.5 v; i d = 15 a; t j = 25 c; fig. 10 - 6.5 8.35 m v gs = 4.5 v; i d = 15 a; t j = 150 c; fig. 11 ; fig. 10 - - 13.8 m v gs = 10 v; i d = 15 a; t j = 25 c; fig. 10 - 5.05 6 m r dson drain-source on-state resistance v gs = 10 v; i d = 15 a; t j = 150 c; fig. 11 ; fig. 10 - - 9.9 m r g gate resistance f = 1 mhz - 0.44 - dynamic characteristics i d = 15 a; v ds = 15 v; v gs = 10 v; fig. 12 ; fig. 13 - 13.6 - nc i d = 15 a; v ds = 15 v; v gs = 4.5 v; fig. 12 ; fig. 13 - 6.4 - nc q g(tot) total gate charge i d = 0 a; v ds = 0 v; v gs = 10 v - 12.7 - nc q gs gate-source charge - 1.5 - nc q gs(th) pre-threshold gate- source charge - 1.3 - nc q gs(th-pl) post-threshold gate- source charge - 0.2 - nc q gd gate-drain charge i d = 15 a; v ds = 15 v; v gs = 4.5 v; fig. 12 ; fig. 13 - 1.7 - nc v gs(pl) gate-source plateau voltage i d = 15 a; v ds = 15 v; fig. 12 ; fig. 13 - 2 - v c iss input capacitance - 817 - pf c oss output capacitance - 605 - pf c rss reverse transfer capacitance v ds = 15 v; v gs = 0 v; f = 1 mhz; t j = 25 c; fig. 14 - 62 - pf t d(on) turn-on delay time - 7.5 - ns t r rise time - 11 - ns t d(off) turn-off delay time - 9.8 - ns t f fall time v ds = 15 v; r l = 1 ; v gs = 4.5 v; r g(ext) = 5 - 7.2 - ns
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 7 / 13 symbol parameter conditions min typ max unit q oss output charge v gs = 0 v; v ds = 15 v; f = 1 mhz; t j = 25 c - 11.8 - nc source-drain diode v sd source-drain voltage i s = 10 a; v gs = 0 v; t j = 25 c; fig. 15 - 0.78 1.2 v t rr reverse recovery time - 23.8 - ns q r recovered charge [1] - 12.6 - nc t a reverse recovery rise time - 10.3 - ns t b reverse recovery fall time - 13.5 - ns s softness factor i s = 15 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 15 v; fig. 16 - 1.3 - [1] includes capacitive recovery 003aal127 0 0.25 0.5 0.75 1 0 1 2 2 4 3 6 4 8 6 0 v d s (v) i d i d (a) (a) 2.4 v 2.4 v 2.6 v 2.6 v 2.8 v 2.8 v v g s = 3 v v g s = 3 v 3.5 v 3.5 v 4.5 v 4.5 v 10 v 10 v fig. 7. output characteristics; drain current as a function of drain-source voltage; typical values 003aal128 0 2 4 6 8 1 0 1 2 1 4 1 6 0 5 1 0 1 5 2 0 2 5 3 0 v g s (v) r dson r dson fig. 8. drain-source on-state resistance as a function of gate-source voltage; typical values
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 8 / 13 003aal130 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 0 2 0 3 0 4 0 5 0 v g s (v) i d i d (a) (a) t j = 25c t j = 25c 150c 150c fig. 9. transfer characteristics; drain current as a function of gate-source voltage; typical values 003aal133 0 1 0 2 0 3 0 4 0 5 0 6 0 0 8 1 6 2 4 3 2 4 0 i d (a) r dson r dson 2.8 v 2.8 v 3 v 3 v 3.5 v 3.5 v 4.5 v 4.5 v 10 v 10 v fig. 10. drain-source on-state resistance as a function of drain current; typical values 003aal037 -60 -30 0 3 0 6 0 9 0 120 150 180 0 0.4 0.8 1.2 1.6 2 t j (c) a a 10 v 10 v v g s = 4.5 v v g s = 4.5 v fig. 11. normalized drain-source on-state resistance factor as a function of junction temperature 0 0 3 a a a 5 0 8 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 12. gate charge waveform definitions
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 9 / 13 003aal135 0 2 4 6 8 1 0 1 2 1 4 1 6 0 2 4 6 8 1 0 q g (nc) v g s v g s (v) (v) 15 v 15 v v d s = 6 v v d s = 6 v 24 v 24 v fig. 13. gate-source voltage as a function of gate charge; typical values 003aal136 1 0 - 1 1 1 0 1 0 2 1 0 1 0 2 1 0 3 1 0 4 v d s (v) c c (pf) (pf) c iss c iss c oss c oss c rss c rss fig. 14. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aal137 0 0.2 0.4 0.6 0.8 1 1.2 1 0 - 1 1 1 0 1 0 2 v s d (v) i s i s (a) (a) t j = 25c t j = 25c 150c 150c fig. 15. source current as a function of source-drain voltage; typical values 003aal160 0 t (s) i d (a) i r m 0.25 i r m t a t b t r r fig. 16. reverse recovery timing definition
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 10 / 13 11. package outline references outline version european projection issue date iec jedec jeita sot669 mo-235 sot669_po 11-03-25 13-02-27 unit (1) m m max nom min 1.20 1.01 0.15 0.00 0.25 0.50 0.35 4.41 3.62 2.2 2.0 6.2 5.8 0.85 0.40 a dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. plastic single-ended surface-mounted package (lfp ak56; power-so8); 4 leads sot669 a 1 a 2 1.10 0.95 a 3 b b 2 b 3 0.1 l 2 w y 8 0 b 4 c c 2 d (1) d 1 (1) e (1) e 1 (1) 3.3 3.1 e 1.27 h l 0.25 0.19 0.30 0.24 4.20 1.3 0.8 0.25 0.9 0.7 4.10 3.80 5.0 4.8 1.3 0.8 l 1 a c 1/2 e w a 0 5 mm scale e e 1 b c 2 a 2 1 2 3 4 mounting base d 1 c e b 2 b 3 b 4 h d l 2 l 1 c x y c q ( a 3 ) l a a 1 detail x fig. 17. package outline lfpak56; power-so8 (sot669)
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 11 / 13 12. legal information 12.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions preview the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nxp does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nxp semiconductors products by customer. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 12 / 13 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors standard warranty and nxp semiconductors product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp b.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors PSMN6R1-30YLD n-channel 30 v, 6.1 m logic level mosfet in lfpak56 using nextpowers3 technology PSMN6R1-30YLD all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2014. all rights reserved product data sheet 10 february 2014 13 / 13 13. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ? nxp n.v. 2014. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 10 february 2014

▲Up To Search▲

Price & Availability of PSMN6R1-30YLD

	To Download PSMN6R1-30YLD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .